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www..com K9HAG08U1M K9L8G08U0M K9MBG08U5M Preliminary FLASH MEMORY K9XXG08UXM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. 1. For updates or additional information about Samsung products, contact your nearest Samsung office. 2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar applications where Product failure could result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply. * Samsung Electronics reserves the right to change products or specification without notice. 1 www..com K9HAG08U1M K9L8G08U0M K9MBG08U5M Preliminary FLASH MEMORY Document TitleD 1G x 8 Bit / 2G x 8 Bit / 4G x 8 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 0.2 0.3 0.4 History 1. Initial issue 1.Technical Note is changed 1. Endurance is changed. (10K->1.5K) 1. 4bit/512Byte ECC->3bit/512Byte ECC 2. The number of bad block is changed from 160 to 100 for 8Gb DDP. 3. Note of program/erase characteristics is added. Draft Date Mar. 1. 2005 Apr. 1. 2005 May 3. 2005 June 29. 2005 July 7. 2005 Remark Advance Advance Preliminary Preliminary Preliminary 0.5 0.6 1.tPROG 800s(Typ.) -> 950s(Typ.) 1..AC Para. tRHW deleted 2. Retention 10 Year -> 5 Year Aug. 22. 2005 Aug. 29. 2005 Preliminary Preliminary The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have any questions, please contact the SAMSUNG branch office near your office. 2 www..com K9HAG08U1M K9L8G08U0M K9MBG08U5M Preliminary FLASH MEMORY 1G x 8 Bit / 2G x 8 Bit / 4G x 8 Bit NAND Flash Memory PRODUCT LIST Part Number K9L8G08U0M-Y,P K9HAG08U1M-Y,P K9MBG08U5M-Y,P 2.7V ~ 3.6V X8 Vcc Range Organization PKG Type TSOP1 TSOP1-DSP FEATURES * Voltage Supply : 2.7 V ~ 3.6 V * Organization - Memory Cell Array : (1G+ 32M)bit x 8bit - Data Register : (2K + 64)bit x8bit * Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (256K + 8K)Byte * Page Read Operation - Page Size : (2K + 64)Byte - Random Read : 50s(Max.) - Serial Access : 30ns(Min.) *K9MBG08U5M : 50ns(Min.) * Memory Cell : 2bit / Memory Cell * Fast Write Cycle Time - Program time : 950s(Typ.) - Block Erase Time : 1.5ms(Typ.) * Command/Address/Data Multiplexed I/O Port * Hardware Data Protection - Program/Erase Lockout During Power Transitions * Reliable CMOS Floating-Gate Technology - Endurance : 1.5K Program/Erase Cycles with 3bit/512Byte ECC) - Data Retention : 5 Years * Command Register Operation * Unique ID for Copyright Protection * Package : - K9L8G08U0M-YCB0/YIB0 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch) - K9L8G08U0M-PCB0/PIB0 : Pb-FREE PACKAGE 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch) - K9HAG08U1M-YCB0/YIB0 : Two K9L8G08U0M stacked 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch) - K9HAG08U1M-PCB0/PIB0 : Pb-FREE PACKAGE 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch) - K9MBG08U5M-YCB0/YIB0 : Two K9HAG08U0M package stacked 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch) - K9MBG08U5M-PCB0/PIB0 : Pb-FREE PACKAGE 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch) GENERAL DESCRIPTION Offered in 1Gx8bit, the K9L8G08U0M is a 8G-bit NAND Flash Memory with spare 256M-bit. Its NAND cell provides the most costeffective solution for the solid state mass storage market. A program operation can be performed in typical 950s on the 2,112-byte page and an erase operation can be performed in typical 1.5ms on a (256K+8K)byte block. Data in the data register can be read out at 30ns(K9MBG08U5M:50ns) cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9L8G08U0Ms extended reliability of 1.5K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9L8G08U0M is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility. An ultra high density solution having two 8Gb stacked with two chip selects is also available in standard TSOPI package and another ultra high density solution having two 16Gb TSOPI package stacked with four chip selects is also available in TSOPI-DSP. 3 www..com K9HAG08U1M K9L8G08U0M K9MBG08U5M PIN CONFIGURATION (TSOP1) K9L8G08U0M-YCB0,PCB0/YIB0,PIB0 N.C N.C N.C N.C N.C N.C R/B RE CE N.C N.C Vcc Vss N.C N.C CLE ALE WE WP N.C N.C N.C N.C N.C 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 N.C N.C N.C N.C I/O7 I/O6 I/O5 I/O4 N.C N.C N.C Vcc Vss N.C N.C N.C I/O3 I/O2 I/O1 I/O0 N.C N.C N.C N.C Preliminary FLASH MEMORY 48-pin TSOP1 Standard Type 12mm x 20mm PACKAGE DIMENSIONS 48-PIN LEAD/LEAD FREE PLASTIC THIN SMALL OUT-LINE PACKAGE TYPE(I) 48 - TSOP1 - 1220AF Unit :mm/Inch 0.10 MAX 0.004 #48 ( 0.25 ) 0.010 12.40 0.488 MAX #24 #25 1.000.05 0.0390.002 0.25 0.010 TYP 18.400.10 0.7240.004 +0.075 20.000.20 0.7870.008 0.20 -0.03 +0.07 #1 0.008-0.001 0.16 -0.03 +0.07 +0.003 0.50 0.0197 12.00 0.472 0.05 0.002 MIN 0.125 0.035 0~8 0.45~0.75 0.018~0.030 ( 0.50 ) 0.020 4 +0.003 0.005-0.001 1.20 0.047MAX www..com K9HAG08U1M K9L8G08U0M K9MBG08U5M PIN CONFIGURATION (TSOP1) K9HAG08U1M-YCB0,PCB0/YIB0,PIB0 N.C N.C N.C N.C N.C R/B2 R/B1 RE CE1 CE2 N.C Vcc Vss N.C N.C CLE ALE WE WP N.C N.C N.C N.C N.C 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 N.C N.C N.C N.C I/O7 I/O6 I/O5 I/O4 N.C N.C N.C Vcc Vss N.C N.C N.C I/O3 I/O2 I/O1 I/O0 N.C N.C N.C N.C Preliminary FLASH MEMORY 48-pin TSOP1 Standard Type 12mm x 20mm PACKAGE DIMENSIONS 48-PIN LEAD/LEAD FREE PLASTIC THIN SMALL OUT-LINE PACKAGE TYPE(I) 48 - TSOP1 - 1220AF Unit :mm/Inch 0.10 MAX 0.004 #48 ( 0.25 ) 0.010 12.40 0.488 MAX #24 #25 1.000.05 0.0390.002 0.25 0.010 TYP 18.400.10 0.7240.004 +0.075 20.000.20 0.7870.008 0.20 -0.03 +0.07 #1 0.008-0.001 0.16 -0.03 +0.07 +0.003 0.50 0.0197 12.00 0.472 0.05 0.002 MIN 0.125 0.035 0~8 0.45~0.75 0.018~0.030 ( 0.50 ) 0.020 5 +0.003 0.005-0.001 1.20 0.047MAX www..com K9HAG08U1M K9L8G08U0M K9MBG08U5M PIN CONFIGURATION (TSOP1-DSP) K9MBG08U5M-YCB0,PCB0/YIB0,PIB0 N.C N.C N.C R/B4 R/B3 R/B2 R/B1 RE CE1 CE2 N.C Vcc Vss CE3 CE4 CLE ALE WE WP N.C N.C N.C N.C N.C 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 Preliminary FLASH MEMORY 48-pin TSOP1 Dual Stacked Package 12mm x 20mm N.C N.C N.C N.C I/O7 I/O6 I/O5 I/O4 N.C N.C N.C Vcc Vss N.C N.C N.C I/O3 I/O2 I/O1 I/O0 N.C N.C N.C N.C PACKAGE DIMENSIONS 48-PIN LEAD/LEAD FREE PLASTIC THIN SMALL OUT-LINE PACKAGE TYPE(I) 48 - TSOP1 - 1220AF 18.80 MAX REF Unit :mm/Inch SEATING PLANE -A#48 Pi n #1 0.13~0.23 12.40 MAX REF #24 (0.10) A TYP BOTH SIDES BOTTOM TSOP ONLY (0.249) BASIC GAGE PLANE 0.399~0.600 20.000.20 0.02 MIN #25 0.50 TYP 6 2.35 MAX #1 (0.10) A www..com K9HAG08U1M K9L8G08U0M K9MBG08U5M PIN DESCRIPTION Pin Name I/O0 ~ I/O7 Pin Function Preliminary FLASH MEMORY DATA INPUTS/OUTPUTS The I/O pins are used to input command, address and data, and to output data during read operations. The I/O pins float to high-z when the chip is deselected or when the outputs are disabled. COMMAND LATCH ENABLE The CLE input controls the activating path for commands sent to the command register. When active high, commands are latched into the command register through the I/O ports on the rising edge of the WE signal. ADDRESS LATCH ENABLE The ALE input controls the activating path for address to the internal address registers. Addresses are latched on the rising edge of WE with ALE high. CHIP ENABLE The CE input is the device selection control. When the device is in the Busy state, CE high is ignored, and the device does not return to standby mode in program or erase operation. Regarding CE control during read operation, refer to 'Page read' section of Device operation. READ ENABLE The RE input is the serial data-out control, and when active drives the data onto the I/O bus. Data is valid tREA after the falling edge of RE which also increments the internal column address counter by one. WRITE ENABLE The WE input controls writes to the I/O port. Commands, address and data are latched on the rising edge of the WE pulse. WRITE PROTECT The WP pin provides inadvertent write/erase protection during power transitions. The internal high voltage generator is reset when the WP pin is active low. READY/BUSY OUTPUT The R/B output indicates the status of the device operation. When low, it indicates that a program, erase or random read operation is in process and returns to high state upon completion. It is an open drain output and does not float to high-z condition when the chip is deselected or when outputs are disabled. POWER VCC is the power supply for device. GROUND NO CONNECTION Lead is not internally connected. CLE ALE CE RE WE WP R/B Vcc Vss N.C NOTE : Connect all VCC and VSS pins of each device to common power supply outputs. Do not leave VCC or VSS disconnected. There are two CE pins (CE1 & CE2) in the K9HAG08U1M and four CE pins (CE1 & CE2 & CE3 & CE4) in the K9MBG08U5M. There are two R/B pins (R/B1 & R/B2) in the K9HAG08U1M and four R/B pins (R/B1 & R/B2 & R/B3 & R/B4) in the K9MBG08U5M. 7 www..com K9HAG08U1M K9L8G08U0M K9MBG08U5M Figure 1. K9L8G08U0M Functional Block Diagram VCC VSS A12 - A30 X-Buffers Latches & Decoders Y-Buffers Latches & Decoders 8,192M + 256M Bit NAND Flash ARRAY Preliminary FLASH MEMORY A0 - A11 (2,048 + 64)Byte x 524,288 Data Register & S/A Y-Gating Command Command Register I/O Buffers & Latches VCC VSS I/0 0 CE RE WE Control Logic & High Voltage Generator Global Buffers Output Driver I/0 7 CLE ALE WP Figure 2. K9L8G08U0M Array Organization 1 Block = 128 Pages (256K + 8k) Byte 512K Pages (=4,096Blocks) 8 bit 2K Bytes 64 Bytes 1 Page = (2K + 64)Bytes 1 Block = (2K + 64)B x 128 Pages = (256K + 8K) Bytes 1 Device = (2K+64)B x 128Pages x 4,096 Blocks = 8,448 Mbits Page Register 2K Bytes I/O 0 1st Cycle 2nd Cycle 3rd Cycle 4th Cycle 5th Cycle A0 A8 A12 A20 A28 I/O 1 A1 A9 A13 A21 A29 I/O 2 A2 A10 A14 A22 A30 64 Bytes I/O 3 A3 A11 A15 A23 *L I/O 0 ~ I/O 7 I/O 4 A4 *L A16 A24 *L I/O 5 A5 *L A17 A25 *L I/O 6 A6 *L A18 A26 *L I/O 7 A7 *L A19 A27 *L Column Address Column Address Row Address Row Address Row Address NOTE : Column Address : Starting Address of the Register. * L must be set to "Low". * The device ignores any additional input of address cycles than required. 8 www..com K9HAG08U1M K9L8G08U0M K9MBG08U5M Product Introduction Preliminary FLASH MEMORY The K9L8G08U0M is a 8,448Mbit(8,858,370,048 bit) memory organized as 524,288 rows(pages) by 2,112x8 columns. Spare 64 columns are located from column address of 2,048~2,111. A 2,112-byte data register is connected to memory cell arrays for accommodating data transfer between the I/O buffers and memory cells during page read and page program operations. The memory array is made up of 32 cells that are serially connected to form a NAND structure. Each of the 32 cells resides in a different page. A block consists of two NAND structured strings. A NAND structure consists of 32 cells. A cell has 2-bit data. Total 1,081,344 NAND cells reside in a block. The program and read operations are executed on a page basis, while the erase operation is executed on a block basis. The memory array consists of 4,096 separately erasable 256K-byte blocks. It indicates that the bit by bit erase operation is prohibited on the K9L8G08U0M. The K9L8G08U0M has addresses multiplexed into 8 I/Os. This scheme dramatically reduces pin counts and allows system upgrades to future densities by maintaining consistency in system board design. Command, address and data are all written through I/O's by bringing WE to low while CE is low. Those are latched on the rising edge of WE. Command Latch Enable(CLE) and Address Latch Enable(ALE) are used to multiplex command and address respectively, via the I/O pins. Some commands require one bus cycle. For example, Reset Command, Status Read Command, etc require just one cycle bus. Some other commands, like page read and block erase and page program, require two cycles: one cycle for setup and the other cycle for execution. The 1G-byte physical space requires 30 addresses, thereby requiring five cycles for addressing : 2 cycles of column address, 3 cycles of row address, in that order. Page Read and Page Program need the same five address cycles following the required command input. In Block Erase operation, however, only three row address cycles are used. Device operations are selected by writing specific commands into the command register. Table 1 defines the specific commands of the K9L8G08U0M. The K9HAG08U1M is composed of two K9L8G08U0M chips which are selected separately by each CE1 and CE2 and the K9MBG08U5M is composed of four K9L8G08U0M chips which are selected seperately by each CE1, CE2, CE3 and CE4. Therefore, in terms of each CE, the basic operations of K9HAG08U0M and K9MBG08U5M are same with K9L8G08U0M except some AC/DC charateristics. Table 1. Command Sets Function Read Read ID Reset Page Program Two-Plane Page Program(2) Block Erase Two-Plane Block Erase Random Data Input(1) Random Data Output Read Status Chip1 Status Chip2 Status (3) (3) (1) 1st Cycle 00h 90h FFh 80h 80h----11h 60h 60h----60h 85h 05h 70h F1h F2h 2nd Cycle 30h 10h 81h----10h D0h D0h E0h Acceptable Command during Busy O O O O NOTE : 1. Random Data Input/Output can be executed in a page. 2. Any command between 11h and 81h is prohibited except 70h, F1h, F2h and FFh. 3. Interleave-operation between two chips is allowed. It's prohibited to use F1h and F2h commands for other operations except interleave-operation. Caution : Any undefined command inputs are prohibited except for above command set of Table 1. 9 www..com K9HAG08U1M K9L8G08U0M K9MBG08U5M Memory Map Preliminary FLASH MEMORY K9L8G08U0M is arranged in four 2Gb memory planes. Each plane contains 1,024 blocks and 2112 byte page registers. This allows it to perform simultaneous page program and block erase by selecting one page or block from each plane. The block address map is configured so that two-plane program/erase operations can be executed by dividing the memory array into plane 0~1 or plane 2~3 separately. For example, two-plane program/erase operation into plane 0 and plane 2 is prohibited. that is to say, two-plane program/erase operation into plane 0 and plane 1 or into plane 2 and plane 3 is allowed Plane 0 (1024 Block) Plane 1 (1024 Block) Plane 2 (1024 Block) Plane 3 (1024 Block) Block 0 Page 0 Page 1 Block 1 Page 0 Page 1 Block 2048 Page 0 Page 1 Block 2049 Page 0 Page 1 Page 126 Page 127 Block 2 Page 0 Page 1 Page 126 Page 127 Block 3 Page 0 Page 1 Page 126 Page 127 Block 2050 Page 0 Page 1 Page 126 Page 127 Block 2051 Page 0 Page 1 Page 126 Page 127 Page 126 Page 127 Page 126 Page 127 Page 126 Page 127 Block 2044 Page 0 Page 1 Block 2045 Page 0 Page 1 Block 4092 Page 0 Page 1 Block 4093 Page 0 Page 1 Page 126 Page 127 Block 2046 Page 0 Page 1 Page 126 Page 127 Block 2047 Page 0 Page 1 Page 126 Page 127 Block 4094 Page 0 Page 1 Page 126 Page 127 Block 4095 Page 0 Page 1 Page 126 Page 127 2112byte Page Registers Page 126 Page 127 2112byte Page Registers Page 126 Page 127 2112byte Page Registers Page 126 Page 127 2112byte Page Registers 10 www..com K9HAG08U1M K9L8G08U0M K9MBG08U5M ABSOLUTE MAXIMUM RATINGS Parameter Symbol VCC Voltage on any pin relative to VSS VIN VI/O Temperature Under Bias K9XXG08UXM-XCB0 K9XXG08UXM-XIB0 Storage Temperature Short Circuit Current K9XXG08UXM-XCB0 K9XXG08UXM-XIB0 Ios TSTG TBIAS Preliminary FLASH MEMORY Rating -0.6 to + 4.6 -0.6 to + 4.6 -0.6 to Vcc+0.3 (<4.6V) -10 to +125 -40 to +125 -65 to +150 5 C mA C V Unit NOTE : 1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns. Maximum DC voltage on input/output pins is VCC+0.3V which, during transitions, may overshoot to VCC+2.0V for periods <20ns. 2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability. RECOMMENDED OPERATING CONDITIONS (Voltage reference to GND, K9XXG08UXM-XCB0 :TA=0 to 70C, K9XXG08UXM-XIB0:TA=-40 to 85C) Parameter Supply Voltage Supply Voltage Symbol VCC VSS Min 2.7 0 Typ. 3.3 0 Max 3.6 0 Unit V V DC AND OPERATING CHARACTERISTICS(Recommended operating conditions otherwise noted.) Parameter Page Read with Serial Access Operating Program Current Erase Stand-by Current(TTL) Stand-by Current(CMOS) Input Leakage Current Output Leakage Current Input High Voltage Input Low Voltage, All inputs Output High Voltage Level Output Low Voltage Level Output Low Current(R/B) Symbol ICC1 ICC2 ICC3 ISB1 ISB2 ILI ILO VIH(1) VIL (1) Test Conditions tRC=30ns, CE=VIL, IOUT=0mA CE=VIH, WP=0V/VCC CE=VCC-0.2, WP=0V/VCC VIN=0 to Vcc(max) VOUT=0 to Vcc(max) IOH=-400A IOL=2.1mA VOL=0.4V Min 0.8 x Vcc -0.3 2.4 8 Typ 15 15 15 20 10 Max 30 30 30 1 100 20 20 VCC+0.3 0.2 x Vcc 0.4 - Unit mA A VOH VOL IOL(R/B) V mA NOTE : 1. VIL can undershoot to -0.4V and VIH can overshoot to VCC + 0.4V for durations of 20 ns or less. 2. Typical value are measured at Vcc=3.3V, TA=25C. Not 100% tested. 3. The typical value of the K9HAG08U1M's ISB2 is 40A and the maximum value is 200A. 4. The typical value of the K9MBG08U5M's ISB2 is 80A and the maximum value is 400A. 5. The maximum value of K9HAG08U1M's ILI and ILO is 40A. 6. The maximum value of K9MBG08U5M's ILI and ILO is 80A. 11 www..com K9HAG08U1M K9L8G08U0M K9MBG08U5M VALID BLOCK Parameter K9L8G08U0M K9HAG08U1M K9MBG08U5M Symbol NVB NVB NVB Min 3,996 7,992 15,984 Typ. - Preliminary FLASH MEMORY Max 4,096 8,192 16,384 Unit Blocks Blocks Blocks NOTE : 1. The device may include initial invalid blocks when first shipped. Additional invalid blocks may develop while being used. The number of valid blocks is presented with both cases of invalid blocks considered. Invalid blocks are defined as blocks that contain one or more bad bits. Do not erase or program factory-marked bad blocks. Refer to the attached technical notes for appropriate management of invalid blocks. 2. The 1st block, which is placed on 00h block address, is guaranteed to be a valid block at the time of shipment 3. The number of valid block is on the basis of single plane operations, and this may be decreased with two plane operations. * : Each K9L8G08U0M chip in the K9HAG08U1M and K9MBG08U5M has Maximum 100 invalid blocks. AC TEST CONDITION (K9XXG08UXM-XCB0:TA=0 to 70C, K9XXG08UXM-XIB0:TA=-40 to 85C, K9XXG08UXM: Vcc=2.7V~3.6V unless otherwise noted) Parameter Input Pulse Levels Input Rise and Fall Times Input and Output Timing Levels K9XXG08UXM 0V to Vcc 5ns Vcc/2 1 TTL GATE and CL=50pF (K9L8G08U0M-Y,P) Output Load 1 TTL GATE and CL=30pF (K9HAG08U1M-Y,P) 1 TTL GATE and CL=30pF (K9MBG08U5M-Y,P) CAPACITANCE(TA=25C, VCC=3.3V, f=1.0MHz) Item Input/Output Capacitance Input Capacitance Symbol CI/O CIN Test Condition VIL=0V VIN=0V Min Max K9L8G08U0M 20 20 K9HAG08U1M 40 40 K9MBG08U5M 80 80 Unit pF pF NOTE : Capacitance is periodically sampled and not 100% tested. MODE SELECTION CLE H L H L L L X X X X X ALE L H L H L L X X X X (1) CE L L L L L L X X X X H WE RE H H H H H WP X X H H H X Data Input Data Output During Read(Busy) Write Mode Read Mode Mode Command Input Address Input(5clock) Command Input Address Input(5clock) H X X X X X H X X X X X H H L 0V/VCC (2) During Program(Busy) During Erase(Busy) Write Protect Stand-by X NOTE : 1. X can be VIL or VIH. 2. WP should be biased to CMOS high or CMOS low for standby. 12 www..com K9HAG08U1M K9L8G08U0M K9MBG08U5M Program / Erase Characteristics Parameter Program Time Dummy Busy Time for Multi Plane Program Number of Partial Program Cycles Block Erase Time Symbol tPROG tDBSY Nop tBERS Min Typ 0.95 0.5 1.5 Preliminary FLASH MEMORY Max 2 1 1 10 Unit ms s cycle ms NOTE 1. Typical value is measured at Vcc=3.3V, TA=25C. Not 100% tested. 2. Typical Program time is defined as the time within which more than 50% of the whole pages are programed at 3.3V Vcc and 25C temperature. 3. Within a block, program time(tPROG) of page group A is faster than that of page group B. Typical tPROG is the average program time of two pages of a sampled block each from page group A and group B. Page Group A: Page 0, Page 1, Page 4, Page 5, ... , Page 120, Page 121, Page 124, Page 125 Page Group B: Page 2, Page 3, Page 6, Page 7, ... , Page 122, Page 123, Page 126, Page 127 AC Timing Characteristics for Command / Address / Data Input Min Parameter Symbol K9MBG08U5M 25 10 35 10 25 25 10 20 10 45 15 70 K9L8G08U0M K9HAG08U1M 15 5 20 5 15 15 5 15 5 30 10 70 K9MBG08U5M Max K9L8G08U0M K9HAG08U1M ns ns ns ns ns ns ns ns ns ns ns ns Unit CLE Setup Time CLE Hold Time CE Setup Time CE Hold Time WE Pulse Width ALE Setup Time ALE Hold Time Data Setup Time Data Hold Time Write Cycle Time WE High Hold Time Address to Data Loading Time tCLS(1) tCLH tCS(1) tCH tWP tALS(1) tALH tDS (1) tDH tWC tWH tADL (2) NOTES : 1. The transition of the corresponding control pins must occur only once while WE is held low. 2. tADL is the time from the WE rising edge of final address cycle to the WE rising edge of first data cycle. 13 www..com K9HAG08U1M K9L8G08U0M K9MBG08U5M AC Characteristics for Operation Min Parameter Symbol K9MBG08U5M K9L8G08U0M K9HAG08U1M 10 10 20 25 50 15 15 15 0 60 10 10 20 15 30 15 5 15 10 0 60 - Preliminary FLASH MEMORY Max K9MBG08U5M 50 K9L8G08U0M K9HAG08U1M 50 100 30 45 100 30 5/10/500(1) 100 20 25 100 30 5/10/500(1) s ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns s Unit Data Transfer from Cell to Register ALE to RE Delay CLE to RE Delay Ready to RE Low RE Pulse Width WE High to Busy Read Cycle Time RE Access Time CE Access Time RE High to Output Hi-Z CE High to Output Hi-Z RE High to Output Hold RE Low to Output Hold CE High to OutputHold RE High Hold Time Output Hi-Z to RE Low WE High to RE Low Device Resetting Time(Read/Program/Erase) tR tAR tCLR tRR tRP tWB tRC tREA tCEA tRHZ tCHZ tRHOH tLROH tCOH tREH tIR tWHR tRST NOTE: 1. If reset command(FFh) is written at Ready state, the device goes into Busy for maximum 5s. 14 www..com K9HAG08U1M K9L8G08U0M K9MBG08U5M NAND Flash Technical Notes Initial Invalid Block(s) Preliminary FLASH MEMORY Initial invalid blocks are defined as blocks that contain one or more initial invalid bits whose reliability is not guaranteed by Samsung. The information regarding the initial invalid block(s) is called the initial invalid block information. Devices with initial invalid block(s) have the same quality level as devices with all valid blocks and have the same AC and DC characteristics. An initial invalid block(s) does not affect the performance of valid block(s) because it is isolated from the bit line and the common source line by a select transistor. The system design must be able to mask out the initial invalid block(s) via address mapping. The 1st block, which is placed on 00h block address, is guaranteed to be a valid block at the time of shipment. Identifying Initial Invalid Block(s) All device locations are erased(FFh) except locations where the initial invalid block(s) information is written prior to shipping. The initial invalid block(s) status is defined by the 1st byte in the spare area. Samsung makes sure that the last page of every initial invalid block has non-FFh data at the column address of 2,048. The initial invalid block information is also erasable in most cases, and it is impossible to recover the information once it has been erased. Therefore, the system must be able to recognize the initial invalid block(s) based on the initial invalid block information and create the initial invalid block table via the following suggested flow chart(Figure 3). Any intentional erasure of the initial invalid block information is prohibited. Start Set Block Address = 0 Increment Block Address * Create (or update) initial Invalid Block(s) Table No Check "FFh" at the column address 2048 of the last page in the block Check "FFh" ? Yes No Last Block ? Yes End Figure 3. Flow chart to create initial invalid block table. 15 www..com K9HAG08U1M K9L8G08U0M K9MBG08U5M NAND Flash Technical Notes (Continued) Error in write or read operation Preliminary FLASH MEMORY Within its life time, additional invalid blocks may develop with NAND Flash memory. Refer to the qualification report for the actual data. Block replacement should be done upon erase or program error. Failure Mode Write Read Erase Failure Program Failure Up to Four Bit Failure Detection and Countermeasure sequence Status Read after Erase --> Block Replacement Status Read after Program --> Block Replacement Verify ECC -> ECC Correction ECC : Error Correcting Code --> RS Code etc. Example) 3bit correction / 512-byte Program Flow Chart Start Write 80h Write Address Write Data Write 10h Read Status Register I/O 6 = 1 ? or R/B = 1 ? Yes No I/O 0 = 0 ? No * Program Error Yes Program Completed * : If program operation results in an error, map out the block including the page in error and copy the target data to another block. 16 www..com K9HAG08U1M K9L8G08U0M K9MBG08U5M NAND Flash Technical Notes (Continued) Erase Flow Chart Start Write 60h Write Block Address Write D0h Read Status Register Preliminary FLASH MEMORY Read Flow Chart Start Write 00h Write Address Write 30h Read Data ECC Generation I/O 6 = 1 ? or R/B = 1 ? Yes No No Reclaim the Error Verify ECC Yes Page Read Completed * Erase Error No I/O 0 = 0 ? Yes Erase Completed * : If erase operation results in an error, map out the failing block and replace it with another block. Block Replacement 1st (n-1)th nth (page) { { Block A 1st (n-1)th nth (page) * Step1 When an error happens in the nth page of the Block 'A' during erase or program operation. * Step2 Copy the data in the 1st ~ (n-1)th page to the same location of another free block. (Block 'B') * Step3 Then, copy the nth page data of the Block 'A' in the buffer memory to the nth page of the Block 'B'. * Step4 Do not erase or program to Block 'A' by creating an 'invalid block' table or other appropriate scheme. 1 an error occurs. Buffer memory of the controller. Block B 2 17 www..com K9HAG08U1M K9L8G08U0M K9MBG08U5M NAND Flash Technical Notes (Continued) Addressing for program operation Preliminary FLASH MEMORY Within a block, the pages must be programmed consecutively from the LSB (least significant bit) page of the block to MSB (most significant bit) pages of the block. Random page address programming is prohibited. Page 127 (128) : Page 127 (128) : Page 31 (32) : Page 31 (1) : Page 2 Page 1 Page 0 (3) (2) (1) Page 2 Page 1 Page 0 (3) (32) (2) Data register Data register From the LSB page to MSB page DATA IN: Data (1) Data (128) Ex.) Random page program (Prohibition) DATA IN: Data (1) Data (128) Interleave Page Program K9L8G08U0M is composed of two K9G4G08U0Ms. K9L8G08U0M provides interleaving operation between two K9G4G08U0Ms. This interleaving page program improves the system throughput almost twice compared to non-interleaving page program. At first, the host issues page program command to one of the K9G4G08U0M chips, say K9G4G08U0M(chip #1). Due to this K9L8G08U0M goes into busy state. During this time, K9G4G08U0M(chip #2) is in ready state. So it can execute the page program command issued by the host. After the execution of page program by K9G4G08U0M(chip #1), it can execute another page program regardless of the K9G4G08U0M(chip #2). Before that the host needs to check the status of K9G4G08U0M(chip #1) by issuing F1h command. Only when the status of K9G4G08U0M(chip #1) becomes ready status, host can issue another page program command. If the K9G4G08U0M(chip #1) is in busy state, the host has to wait for the K9G4G08U0M(chip #1) to get into ready state. Similarly, K9G4G08U0M(chip #2) can execute another page program after the completion of the previous program. The host can monitor the status of K9G4G08U0M(chip #2) by issuing F2h command. When the K9G4G08U0M(chip #2) shows ready state, host can issue another page program command to K9G4G08U0M(chip #2). This interleaving algorithm improves the system throughput almost twice. The host can issue page program command to each chip individually. This reduces the time lag for the completion of operation. NOTES : During interleave operations, 70h command is prohibited. 18 www..com Interleave Page Program 10h 10h Command F1h or F2h A30 : High 80h Add & Data I/OX another page program on Chip #1 80h Add & Data A30 : Low R/B (#1) busy of Chip #1 internal only K9HAG08U1M K9L8G08U0M K9MBG08U5M R/B (#2) busy of Chip #2 R/B A B internal only C D 19 Status A B C D Chip 1 : Busy, Chip 1 : Busy, Operation Chip 2 : Ready Chip 2 : Busy Status Command / Data F1h 8xh 8xh Cxh Cxh F2h Cxh 8xh 8xh Cxh Chip 1 : Ready, Chip 2 : Busy Chip 1 : Ready, Chip 2 : Ready State A : Chip #1 is executing a page program operation and chip #2 is in ready state. So the host can issue a page program command to chip #2. State B : Both chip #1 and chip #2 are executing page program operation. State C : Page program on chip #1 is terminated, but page program on chip #2 is still operating. And the system should issue F1h command to detect the status of chip #1. If chip #1 is ready, status I/O6 is "1" and the system can issue another page program command to chip #1. State D : Chip #1 and Chip #2 are ready. According to the above process, the system can operate page program on chip #1 and chip #2 alternately. Preliminary FLASH MEMORY www..com Interleave Block Erase D0h D0h Command F1h or F2h A30 : High 60h Add I/OX another Block Erase on Chip #1 60h Add A30 : Low R/B (#1) busy of Chip #1 internal only K9HAG08U1M K9L8G08U0M K9MBG08U5M R/B (#2) busy of Chip #2 R/B A B internal only C D 20 Status A B C D Chip 1 : Busy, Chip 1 : Busy, Operation Chip 2 : Ready Chip 2 : Busy Status Command / Data F1h 8xh 8xh Cxh Cxh F2h Cxh 8xh 8xh Cxh Chip 1 : Ready, Chip 2 : Busy Chip 1 : Ready, Chip 2 : Ready State A : Chip #1 is executing a block erase operation, and chip #2 is in ready state. So the host can issue a block erase command to chip #2. State B : Both chip #1 and chip #2 are executing block erase operation. State C : Block erase on chip #1 is terminated, but block erase on chip #2 is still operating. And the system should issue F1h command to detect the status of chip #1. If chip #1 is ready, status I/O6 is "1" and the system can issue another block erase command to chip #1. State D : Chip #1 and Chip #2 are ready. According to the above process, the system can operate block erase on chip #1 and chip #2 alternately. Preliminary FLASH MEMORY w w Interleave Two-Plane Page Program 81h Add & Data A30 :Low A30: High A30 :High 10h 80h Add & Data 11h 81h Add & Data 10h I/OX 80h Add & Data 11h w A30 : Low R/B (#1) t DBSY t PROG of Chip #1 . internal only D internal only R/B (#2) t DBSY tPROG of Chip #2 K9HAG08U1M K9L8G08U0M K9MBG08U5M R/B a A B t 1 I/OX Command a 21 D F1h or F2h* S R/B (#1) internal only h R/B (#2) tPROG of Chip #2 internal only e R/B C e 1 t 4 Preliminary FLASH MEMORY State A : Chip #1 is executing a page program operation, and chip #2 is in ready state. So the host can issue a page program command to chip #2. State B : Both chip #1 and chip #2 are executing page program operation. State C : Page program on chip #1 is completed and chip #1 is ready for the next operation. Chip #2 is still executing page program operation. State D : Both chip #1 and chip #2 are ready. Note : *F1h command is required to check the status of chip #1 to issue the next page program command to chip #1. F2h command is required to check the status of chip #2 to issue the next page program command to chip #2. According to the above process, the system can operate two-plane page program on chip #1 and chip #2 alternately. U . www..com Interleave Two-Plane Block Erase I/OX 60h Add Add A30 :High A30 :Low A30 : High 60h D0h 60h Add D0h 60h Add A30 : Low R/B (#1) internal only t BERS of Chip #1 internal only K9HAG08U1M K9L8G08U0M K9MBG08U5M R/B A R/B (#2) t BERS of Chip #2 B 1 I/OX Command 22 tBERS of Chip #2 F1h or F2h* R/B (#1) internal only R/B (#2) internal only R/B C D 1 Preliminary FLASH MEMORY State A : Chip #1 is executing a block erase operation, and chip #2 is in ready state. So the host can issue a block erase command to chip #2. State B : Both chip #1 and chip #2 are executing block erase operation. State C : Block erase on chip #1 is completed and chip #1 is ready for the next operation. Chip #2 is still executing block erase operation. State D : Both chip #1 and chip #2 are ready. Note : *F1h command is required to check the status of chip #1 to issue the next block erase command to chip #1. F2h command is required to check the status of chip #2 to issue the next block erase command to chip #2. According to the above process, the system can operate two-plane block erase on chip #1 and chip #2 alternately. www..com K9HAG08U1M K9L8G08U0M K9MBG08U5M System Interface Using CE don't-care. Preliminary FLASH MEMORY For an easier system interface, CE may be inactive during the data-loading or serial access as shown below. The internal 2,112byte data registers are utilized as separate buffers for this operation and the system design gets more flexible. In addition, for voice or audio applications which use slow cycle time on the order of -seconds, de-activating CE during the data-loading and serial access would provide significant savings in power consumption. Figure 4. Program Operation with CE don't-care. CLE CE don't-care CE WE ALE I/Ox 80h Address(5Cycles) Data Input Data Input 10h tCS CE tCH CE tCEA tREA tWP WE I/O0~7 out RE Figure 5. Read Operation with CE don't-care. CLE CE don't-care CE RE ALE R/B tR WE I/Ox 00h Address(5Cycle) 30h Data Output(serial access) 23 www..com K9HAG08U1M K9L8G08U0M K9MBG08U5M NOTE Preliminary FLASH MEMORY DATA ADDRESS Col. Add1 A0~A7 Col. Add2 A8~A11 Row Add1 A12~A19 Row Add2 A20~A27 Row Add3 A28~A30 Device K9L8G08U0M I/O I/Ox I/O 0 ~ I/O 7 Data In/Out ~2,112byte Command Latch Cycle CLE tCLS tCS CE tCLH tCH tWP WE tALS ALE tDS I/Ox tALH tDH Command Address Latch Cycle tCLS CLE CE tCS tWC tWC tWC tWC tWP WE tALS ALE tDS I/Ox tDH tWH tALH tWP tWH tALS tALH tWP tWH tALH tWP tWH tALH tALH tALS tALS tALS tDS tDH tDS tDH tDS tDH tDS tDH Col. Add1 Col. Add2 Row Add1 Row Add2 Row Add3 24 www..com K9HAG08U1M K9L8G08U0M K9MBG08U5M Input Data Latch Cycle tCLH Preliminary FLASH MEMORY CLE tCH CE ALE tALS tWC tWP WE tDS I/Ox tWH tDH tWP tDH tWP tDH tDS tDS DIN 0 DIN 1 DIN final tRC * Serial Access Cycle after Read(CLE=L, WE=H, ALE=L) CE tREH RE tRHZ tCHZ tREA tCOH tREA tREA tRHZ tRHOH I/Ox tRR R/B Dout Dout Dout NOTES : Transition is measured at 200mV from steady state voltage with load. This parameter is sampled and not 100% tested. tRLOH is valid when frequency is higher than 20MHz. tRHOH starts to be valid when frequency is lower than 20MHz. 25 www..com K9HAG08U1M K9L8G08U0M K9MBG08U5M Preliminary FLASH MEMORY Serial Access Cycle after Read(EDO Type, CLE=L, WE=H, ALE=L) tRC tRP RE tREA tCEA I/Ox tRR tREA tRLOH Dout tREH CE tCHZ tCOH tRHZ tRHOH Dout R/B NOTES : Transition is measured at 200mV from steady state voltage with load. This parameter is sampled and not 100% tested. tRLOH is valid when frequency is higher than 20MHz. tRHOH starts to be valid when frequency is lower than 20MHz. Status Read Cycle tCLR CLE tCLS tCS CE tCH tWP WE tWHR RE tDS I/Ox 70h tDH tIR tREA tRHZ tRHOH Status Output tCEA tCHZ tCOH tCLH 26 www..com K9HAG08U1M K9L8G08U0M K9MBG08U5M Read Operation tCLR CLE Preliminary FLASH MEMORY CE tWC WE tWB tAR ALE tR RE tRR I/Ox 00h Col. Add1 Col. Add2 Row Add1 Row Add2 Row Add3 tRC tRHZ 30h tCHZ tCOH Dout N+2 Dout N Dout N+1 Dout M Column Address Row Address Busy R/B Read Operation(Intercepted by CE) CLE CE WE tWB tAR ALE tR RE tRR I/Ox 00h Col. Add1 Col. Add2 Row Add1 Row Add2 Row Add3 30h tRC Dout N Dout N+1 Column Address Row Address R/B Busy 27 www..com Random Data Output In a Page CLE tCLR K9HAG08U1M K9L8G08U0M K9MBG08U5M CE WE tWB tAR tWHR ALE tR tRC tREA 28 tRR Row Add1 Row Add2 Row Add3 RE I/Ox Row Address 00h Dout N Dout N+1 Col. Add1 Col. Add2 30h 05h Col Add1 Col Add2 E0h Dout M Dout M+1 Column Address Column Address R/B Busy Preliminary FLASH MEMORY www..com K9HAG08U1M K9L8G08U0M K9MBG08U5M Page Program Operation Preliminary FLASH MEMORY CLE CE WE tADL ALE tWB tPROG tWHR RE Din Din N M 1 up to m Byte Serial Input I/Ox 80h tWC tWC tWC Co.l Add1 Col. Add2 Row Add1 Row Add2 Row Add3 10h Program Command 70h Read Status Command I/O0 SerialData Column Address Input Command Row Address R/B I/O0=0 Successful Program I/O0=1 Error in Program 29 www..com Page Program Operation with Random Data Input CLE CE WE tADL tADL tWB tPROG K9HAG08U1M K9L8G08U0M K9MBG08U5M tWC tWC tWC tWHR ALE RE Serial Data Column Address Input Command Row Address Serial Input Random Data Column Address Input Command Serial Input 30 Row Add2 Row Add3 I/Ox 80h 85h Col. Add1 Col. Add2 Col. Add1 Col. Add2 Row Add1 Din Din N N Din M Din J Din K 10h Program Command 70h Read Status Command I/O0 R/B Preliminary FLASH MEMORY www..com K9HAG08U1M K9L8G08U0M K9MBG08U5M Block Erase Operation Preliminary FLASH MEMORY CLE CE tWC WE tWB ALE tBERS tWHR RE I/Ox 60h Row Add1 Row Add2 Row Add3 D0h 70h I/O 0 Row Address Auto Block Erase Setup Command Erase Command R/B Busy Read Status Command I/O0=0 Successful Erase I/O0=1 Error in Erase 31 Two-Plane Page Program Operation www..com CLE CE tDBSY tWC WE tWB tWB tPROG tWHR K9HAG08U1M K9L8G08U0M K9MBG08U5M ALE RE I/Ox 80h Col Add1 Col Add2 Row Add1 Row Add2 Row Add3 Din N 81h Col Add1 Col Add2 Row Add1 Row Add2 Row Add3 Din M Din N Din M 10h Program Confirm Command (True) 70h I/O 0 Serial Data Column Address Input Command 11h Program Page Row Address 1 up to 2112 Byte Data Command (Dummy) Serial Input Read Status Command tDBSY : typ. 500ns max. 1s Ex.) Two-Plane Page Program tDBSY tPROG R/B I/O0~7 Address & Data Input Col Add1,2 & Row Add 1,2,3 2112 Byte Data A0 ~ A11 : Valid A12 ~ A18 : Fixed 'Low' : Fixed 'Low' A19 A20 ~ A29 : Fixed 'Low' A30 : Valid 11h 80h 81h Note Address & Data Input Col Add1,2 & Row Add 1,2,3 2112 Byte Data 10h 32 R/B 70h A0 ~ A11 : Valid A12 ~ A18 : Valid : Fixed 'High' A19 A20 ~ A29 : Valid A30 :Must be same as previous A30 Preliminary FLASH MEMORY Note: Any command between 11h and 81h is prohibited except 70h and FFh. Two-Plane Block Erase Operation www..com CLE CE tWC tWC WE tWB tBERS tWHR K9HAG08U1M K9L8G08U0M K9MBG08U5M ALE RE I/OX 60h Row Address Row Add1 Row Add2 Row Add3 60h D0h Row Add1 Row Add2 RowD0h Add3 70h I/O 0 33 Busy Block Erase Setup Command2 Erase Confirm Command I/O 0 = 0 Successful Erase I/O 0 = 1 Error in Erase Read Status Command Row Address R/B Block Erase Setup Command1 Ex.) Address Restriction for Two-Plane Block Erase Operation tBERS 60h Row Add1,2,3 A12 ~ A18 : Fixed 'Low' : Fixed 'High' A19 A20 ~ A29 : Valid A30 : Must be same as previous A30 ~ A25 A9D0h Address D0h 70h R/B I/O0~7 60h Address Row Add1,2,3 Preliminary FLASH MEMORY A12 ~ A18 : Fixed 'Low' : Fixed 'Low' A19 A20 ~ A29 : Fixed 'Low' : Valid A30 www..com K9HAG08U1M K9L8G08U0M K9MBG08U5M Read ID Operation CLE Preliminary FLASH MEMORY CE WE tAR ALE RE tREA I/Ox 90h Read ID Command 00h Address. 1cycle ECh Device Code 3rd cyc. 4th cyc. 5th cyc. Maker Code Device Code Device K9L8G08U0M K9HAG08U1M K9MBG08U5M Device Code(2nd Cycle) D3h 3rd Cycle 55h 4th Cycle 25h 5th Cycle 58h Same as each K9L8G08U0M in it 34 www..com K9HAG08U1M K9L8G08U0M K9MBG08U5M ID Definition Table 90 ID : Access command = 90H Description 1 Byte 2nd Byte 3rd Byte 4th Byte 5th Byte st Preliminary FLASH MEMORY Maker Code Device Code Internal Chip Number, Cell Type, Number of Simultaneously Programmed Pages, etc Page Size, Block Size, Spare Size, Organization, Serial Access Minimum Plane Number, Plane Size 3rd ID Data Description 1 2 4 8 2 Level Cell 4 Level Cell 8 Level Cell 16 Level Cell 1 2 4 8 Not Support Support Not Support Support 0 1 0 1 0 0 1 1 0 1 0 1 0 0 1 1 0 1 0 1 I/O7 I/O6 I/O5 I/O4 I/O3 I/O2 I/O1 I/O0 0 0 1 1 0 1 0 1 Internal Chip Number Cell Type Number of Simultaneously Programmed Pages Interleave Program Between multiple chips Cache Program 4th ID Data Description Page Size (w/o redundant area ) 1KB 2KB 4KB 8KB 64KB 128KB 256KB 512KB 8 16 x8 x16 50ns/30ns 25ns Reserved Reserved 0 1 0 1 0 1 0 0 1 1 0 0 1 1 0 1 0 1 0 1 I/O7 I/O6 I/O5 I/O4 I/O3 I/O2 I/O1 I/O0 0 0 1 1 0 1 0 1 Block Size (w/o redundant area ) Redundant Area Size ( byte/512byte) Organization Serial Access Minimum 35 www..com K9HAG08U1M K9L8G08U0M K9MBG08U5M 5th ID Data Description 1 2 4 8 64Mb 128Mb 256Mb 512Mb 1Gb 2Gb 4Gb 8Gb 0 0 0 0 0 1 1 1 1 0 0 1 1 0 0 1 1 0 1 0 1 0 1 0 1 I/O7 I/O6 I/O5 I/O4 Preliminary FLASH MEMORY I/O3 I/O2 0 0 1 1 0 1 0 1 I/O1 I/O0 Plane Number Plane Size (w/o redundant Area) Reserved 0 0 36 www..com K9HAG08U1M K9L8G08U0M K9MBG08U5M Device Operation PAGE READ Preliminary FLASH MEMORY Page read is initiated by writing 00h-30h to the command register along with five address cycles. After initial power up, 00h command is latched. Therefore only five address cycles and 30h command initiates that operation after initial power up. The 2,112 bytes of data within the selected page are transferred to the data registers in less than 50s(tR). The system controller can detect the completion of this data transfer(tR) by analyzing the output of R/B pin. Once the data in a page is loaded into the data registers, they may be read out in 30ns(K9MBG08U5M : 50ns) cycle time by sequentially pulsing RE. The repetitive high to low transitions of the RE clock make the device output the data starting from the selected column address up to the last column address. The device may output random data in a page instead of the consecutive sequential data by writing random data output command. The column address of next data, which is going to be out, may be changed to the address which follows random data output command. Random data output can be operated multiple times regardless of how many times it is done in a page. Figure 6. Read Operation CLE CE WE ALE R/B RE I/Ox 00h Address(5Cycle) Col Add1,2 & Row Add1,2,3 30h Data Output(Serial Access) tR Data Field Spare Field 37 www..com K9HAG08U1M K9L8G08U0M K9MBG08U5M Figure 7. Random Data Output In a Page R/B RE I/Ox 00h Address 5Cycles 30h Data Output 05h Address 2Cycles Preliminary FLASH MEMORY tR E0h Data Output Col Add1,2 & Row Add1,2,3 Data Field Spare Field Data Field Spare Field PAGE PROGRAM The device is programmed basically on a page basis, but it does allow multiple partial page programming of a word or consecutive bytes up to 2112, in a single page program cycle. The number of consecutive partial page programming operation within the same page without an intervening erase operation must not exceed 1 time for the page. The addressing should be done in sequential order in a block. A page program cycle consists of a serial data loading period in which up to 2,112bytes of data may be loaded into the data register, followed by a non-volatile programming period where the loaded data is programmed into the appropriate cell. The serial data loading period begins by inputting the Serial Data Input command(80h), followed by the five cycle address inputs and then serial data loading. The words other than those to be programmed do not need to be loaded. The device supports random data input in a page. The column address for the next data, which will be entered, may be changed to the address which follows random data input command(85h). Random data input may be operated multiple times regardless of how many times it is done in a page. The Page Program confirm command(10h) initiates the programming process. Writing 10h alone without previously entering the serial data will not initiate the programming process. The internal write state controller automatically executes the algorithms and timings necessary for program and verify, thereby freeing the system controller for other tasks. Once the program process starts, the Read Status Register command may be entered to read the status register. The system controller can detect the completion of a program cycle by monitoring the R/B output, or the Status bit(I/O 6) of the Status Register. Only the Read Status command and Reset command are valid while programming is in progress. When the Page Program is complete, the Write Status Bit(I/O 0) may be checked(Figure 8). The internal write verify detects only errors for "1"s that are not successfully programmed to "0"s. The command register remains in Read Status command mode until another valid command is written to the command register. Figure 8. Program & Read Status Operation tPROG R/B "0" I/Ox 80h Address & Data Input Col Add1,2 & Row Add1,2,3 Data 10h 70h I/O0 "1" Fail Pass 38 www..com K9HAG08U1M K9L8G08U0M K9MBG08U5M Figure 9. Random Data Input In a Page tPROG R/B Preliminary FLASH MEMORY "0" I/Ox 80h Address & Data Input Col Add1,2 & Row Add1,2,3 Data 85h Address & Data Input Col Add1,2 Data 10h 70h I/O0 "1" Fail Pass BLOCK ERASE The Erase operation is done on a block basis. Block address loading is accomplished in three cycles initiated by an Erase Setup command(60h). Only address A19 to A30 is valid while A12 to A18 is ignored. The Erase Confirm command(D0h) following the block address loading initiates the internal erasing process. This two-step sequence of setup followed by execution command ensures that memory contents are not accidentally erased due to external noise conditions. At the rising edge of WE after the erase confirm command input, the internal write controller handles erase and erase-verify. When the erase operation is completed, the Write Status Bit(I/O 0) may be checked. Figure 10 details the sequence. Figure 10. Block Erase Operation R/B tBERS "0" I/Ox 60h Address Input(3Cycle) Row Add 1,2,3 D0h 70h I/O0 "1" Fail Pass Two-Plane Page Program Two-Plane Page Program is an extension of Page Program, for a single plane with 2112 byte page registers. Since the device is equipped with four memory planes, activating the two sets of 2112 byte page registers enables a simultaneous programming of two pages. But there is some restriction, two-plane program operations can be executed by dividing the memory array into plane 0~1 or plane 2~3 separately. For example, two-plane program operation into plane 0 and plane 2 is prohibited. that is to say, two-plane program operation into plane 0 and plane 1 or into plane 2 and plane 3 is allowed. After writing the first set of data up to 2112 byte into the selected page register, Dummy Page Program command (11h) instead of actual Page Program (10h) is inputted to finish data-loading of the first plane. Since no programming process is involved, R/B remains in Busy state for a short period of time(tDBSY). Read Status command (70h) may be issued to find out when the device returns to Ready state by polling the Ready/Busy status bit(I/O 6). Then the next set of data for the other plane is inputted after the 81h command and address sequences. After inputting data for the last plane, actual True Page Program(10h) instead of dummy Page Program command (11h) must be followed to start the programming process. The operation of R/B and Read Status is the same as that of Page Program. Althougth two planes are programmed simultaneously, pass/fail is not available for each page when the program operation completes. Status bit of I/O 0 is set to "1" when any of the pages fails. Restriction in addressing with Two-Plane Page Program is shown is Figure11. 39 www..com K9HAG08U1M K9L8G08U0M K9MBG08U5M Figure 11. Two-Plane Page Program R/B I/O0 ~ 7 tDBSY Preliminary FLASH MEMORY tPROG 80h Address & Data Input A0 ~ A11 : Valid A12 ~ A18 : Fixed 'Low' A19 : Fixed 'Low' A20 ~ A29 : Fixed 'Low' A30 : Valid 11h Note2 81h Address & Data Input 10h 70h A0 ~ A11 : Valid A12 ~ A18 : Valid A19 : Fixed 'High' A20 ~ A29 : Valid A30 : Must be same as previous A30 NOTE :1. It is noticeable that physically same row address is applied to two planes . 2. Any command between 11h and 81h is prohibited except 70h and FFh. Data Input 80h 11h 81h 10h Plane 0 (1024 Block) Plane 1 (1024 Block) Block 0 Block 2 Block 1 Block 3 Block 1020 Block 1022 Block 1021 Block 1023 NOTE : It is an example for two-plane page program into plane 0&1(In this case, A30 is low), and the method for two-plane page program into plane 2 &3 is same. Two-plane page program into plane 0&2(or plane 0&3, or plane 1&2, or plane 1&3) is prohibited. Two-Plane Block Erase Basic concept of Two-Plane Block Erase operation is identical to that of TwoTwo--Plane Page Program. Up to two blocks, one from each plane can be simultaneously erased. Standard Block Erase command sequences (Block Erase Setup command(60h) followed by three address cycles) may be repeated up to twice for erasing up to two blocks. Only one block should be selected from each plane. The Erase Confirm command(D0h) initiates the actual erasing process. The completion is detected by monitoring R/B pin or Ready/Busy status bit (I/O 6). Figure 12. Two-Plane Erase Operation R/B I/OX tBERS "0" I/O "1" Fail 60h Address (3 Cycle) A12 ~ A18 : Fixed 'Low' :Fixed 'Low' A19 A20 ~ A29 : Fixed 'Low' : Valid A30 60h Address (3 Cycle) D0h 70h Pass A12 ~ A18 : Fixed 'Low' : Fixed 'High' A19 A20 ~ A29 : valid A30 : Must be same as previous A30 NOTE : Two-plane block erase into plane 0&2(or plane 0&3, or plane 1&2, or plane 1&3) is prohibited. 40 www..com K9HAG08U1M K9L8G08U0M K9MBG08U5M READ STATUS Preliminary FLASH MEMORY The device contains a Status Register which may be read to find out whether program or erase operation is completed, and whether the program or erase operation is completed successfully. After writing 70h command to the command register, a read cycle outputs the content of the Status Register to the I/O pins on the falling edge of CE or RE, whichever occurs last. This two line control allows the system to poll the progress of each device in multiple memory connections even when R/B pins are common-wired. RE or CE does not need to be toggled for updated status. Refer to table 2 for specific Status Register definitions. The command register remains in Status Read mode until further commands are issued to it. Therefore, if the status register is read during a random read cycle, the read command(00h) should be given before starting read cycles. Table 2. Read Status Register Definition I/O No. I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 Page Program Pass/Fail Not use Not use Not Use Not Use Not Use Ready/Busy Write Protect Block Erase Pass/Fail Not use Not use Not Use Not Use Not Use Ready/Busy Write Protect Read Not use Not use Not use Not Use Not Use Not Use Ready/Busy Write Protect Pass : "0" Don't -cared Don't -cared Don't -cared Don't -cared Don't -cared Busy : "0" Protected : "0" Ready : "1" Not Protected : "1" Definition Fail : "1" NOTE : 1. I/Os defined 'Not use' are recommended to be masked out when Read Status is being executed. 2. Status Register Definition for F1h & F2h command is same as that of 70h command. Read ID The device contains a product identification mode, initiated by writing 90h to the command register, followed by an address input of 00h. Five read cycles sequentially output the manufacturer code(ECh), and the device code and 3th, 4th, 5th cycle ID respectively. The command register remains in Read ID mode until further commands are issued to it. Figure 13 shows the operation sequence. Figure 13. Read ID Operation CLE CE WE tAR ALE RE tWHR I/OX 90h 00h Address. 1cycle tCLR tCEA tREA ECh Maker code Device Code Device code 3rd Cyc. 4th Cyc. 5th Cyc. Device K9L8G08U0M K9HAG08U1M K9MBG08U5M Device Code(2nd Cycle) D3h 3th Cycle 55h 4th Cycle 25h 5th Cycle 58h Same as each K9L8G08U0M in it 41 www..com K9HAG08U1M K9L8G08U0M K9MBG08U5M RESET Preliminary FLASH MEMORY The device offers a reset feature, executed by writing FFh to the command register. When the device is in Busy state during random read, program or erase mode, the reset operation will abort these operations. The contents of memory cells being altered are no longer valid, as the data will be partially programmed or erased. The command register is cleared to wait for the next command, and the Status Register is cleared to value C0h when WP is high. Refer to table 3 for device status after reset operation. If the device is already in reset state a new reset command will be accepted by the command register. The R/B pin changes to low for tRST after the Reset command is written. Refer to Figure 14 below. Note: If FF reset command is input before write operation to even(or odd) page(e.g. Page address 0x00002, 0x1FFFF) is complete, it may cause damage to the data not only to the page which is being programmed, but also to the adjacent even(or odd) page (i.e. Page address 0x00000, Page 0x1FFFD in this case). Figure 14. RESET Operation tRST R/B I/OX FFh Table 3. Device Status After Power-up Operation mode 00h Command is latched After Reset Waiting for next command 42 www..com K9HAG08U1M K9L8G08U0M K9MBG08U5M READY/BUSY Preliminary FLASH MEMORY The device has a R/B output that provides a hardware method of indicating the completion of a page program, erase and random read completion. The R/B pin is normally high but transitions to low after program or erase command is written to the command register or random read is started after address loading. It returns to high when the internal controller has finished the operation. The pin is an open-drain driver thereby allowing two or more R/B outputs to be Or-tied. Because pull-up resistor value is related to tr(R/B) and current drain during busy(ibusy) , an appropriate value can be obtained with the following reference chart(Fig 15). Its value can be determined by the following guidance. Rp VCC ibusy Ready Vcc R/B open drain output VOL : 0.4V, VOH : 2.4V VOH CL VOL Busy tf tr GND Device Figure 15. Rp vs tr ,tf & Rp vs ibusy @ Vcc = 3.3V, Ta = 25C , CL = 50pF 2.4 400 tr,tf [s] 300n Ibusy 1.2 300 3m Ibusy [A] 200n tr 100n 100 3.6 tf 200 0.8 0.6 2m 1m 3.6 3.6 3.6 1K 2K 3K Rp(ohm) 4K Rp value guidance VCC(Max.) - VOL(Max.) IOL + IL = 3.2V 8mA + IL Rp(min, 3.3V part) = where IL is the sum of the input currents of all devices tied to the R/B pin. Rp(max) is determined by maximum permissible limit of tr 43 www..com K9HAG08U1M K9L8G08U0M K9MBG08U5M Data Protection & Power up sequence Preliminary FLASH MEMORY The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage detector disables all functions whenever Vcc is below about 2V. WP pin provides hardware protection and is recommended to be kept at VIL during power-up and power-down. A recovery time of minimum 10s is required before internal circuit gets ready for any command sequences as shown in Figure 16. The two step command sequence for program/erase provides additional software protection. Figure 16. AC Waveforms for Power Transition ~ 2.5V VCC High ~ 2.5V WP WE 44 10s |
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